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| NID6002N Preferred Device Self-Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N-Channel, DPAK http://onsemi.com HDPlusTM devices are an advanced series of power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Features VDSS (Clamped) 65 V RDS(on) TYP 210 mW ID TYP (Limited) 6.5 A Drain Overvoltage Protection MPWR Gate Input RG * * * * * * * Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Pb-Free Package is Available ESD Protection Temperature Limit Current Limit Current Sense Source MARKING DIAGRAM 1 DPAK CASE 369C STYLE 2 D6002N Y WW G = Device Code = Year = Work Week = Pb-Free Device 2 3 YYW D6 002NG 1 = Gate 2 = Drain 3 = Source ORDERING INFORMATION Device NID6002NT4 NID6002NT4G Package DPAK DPAK (Pb-Free) Shipping 2500/Tape & Reel 2500/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 4 Publication Order Number: NID6002N/D NID6002N MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage Drain Current Total Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) Thermal Resistance Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 Vdc, VGS = 5.0 Vdc, IL = 1.3 Apk, L = 160 mH, RG = 25 W) Operating and Storage Temperature Range (Note 3) Continuous Symbol VDSS VGS ID PD 1.3 2.5 C/W RqJC RqJA RqJA EAS 3.0 95 50 143 mJ Value 70 "14 Internally Limited W Unit Vdc Vdc TJ, Tstg -55 to 150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (700 sq/mm) FR4 PCB, 1 oz cu. 3. Normal pre-fault operating range. See thermal limit range conditions. http://onsemi.com 2 NID6002N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 V, ID = 2 mA) Zero Gate Voltage Drain Current (VDS = 52 V, VGS = 0 V) Gate Input Current (VGS = 5.0 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mA) Threshold Temperature Coefficient Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 V, ID = 2.0 A, TJ @ 25C) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 V, ID = 2.0 A, TJ @ 25C) (VGS = 5.0 V, ID = 2.0 A, TJ @ 150C) Source-Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Slew Rate ON Slew Rate OFF RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 10% Vin to 10% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 10% ID to 90% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 90% Vin to 90% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 90% ID to 10% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 70% to 50% VDD RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 50% to 70% VDD td(on) trise td(off) tfall dVDS/dTon dVDS/dToff - - - - - - 103 246 742 707 73 35 120 285 850 780 - - ns ns ns ns V/ms V/ms VGS(th) 1.0 - RDS(on) - RDS(on) - - VSD - 0.9 1.1 210 445 240 520 V 185 210 mW 1.85 5.0 2.4 - V -mV/C mW V(BR)DSS 60 IDSS - IGSS - 45 200 27 100 mA 65 70 V mA Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25C (Note 6) VDS = 10 V, VGS = 5.0 V, TJ = 130C (Note 6) VDS = 10 V, VGS = 10 V, TJ = 25C (Note 6) VGS = 5.0 V VGS = 5.0 V VGS = 10 V VGS = 10 V VDS = 0 V, VGS = 5.0 V, TJ = TJ > T(fault) VDS = 0 V, VGS = 10 V, TJ = TJ > T(fault) ILIM 4.0 4.0 - 150 - 150 - 5.5 12 6.4 5.5 7.9 180 10 180 20 5.2 11 11 11 - 200 - 200 - - A Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis Input Current during Thermal Fault TLIM(off) DTLIM(on) TLIM(off) DTLIM(on) Ig(fault) C C C C mA ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. 6. Current limit measured at 380 ms after gate pulse. ESD 8000 400 - - - - V http://onsemi.com 3 NID6002N TYPICAL PERFORMANCE CURVES 12 TJ = 25C ID, DRAIN CURRENT (AMPS) 10 8 5V 6 4 3.5 V 2 3.0 V 0 0 5.0 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 4.5 V 4.0 V 10 V ID, DRAIN CURRENT (AMPS) 5 4 TJ = 100C 3 2 TJ = 100C 1 TJ = 25C TJ = -55C 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 6 TJ = -55C TJ = 25C Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 3.0 5.0 7.0 9.0 11 ID = 2 A TJ = 25C 0.23 Figure 2. Transfer Characteristics TJ = 25C 0.22 VGS = 5 V 0.21 0.20 0.19 VGS = 10 V 0.18 2.0 2.5 3.0 3.5 4.0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) (W) 1.6 1.4 1.2 1 0.8 0.6 0.4 -55 0E+00 -35 -15 5 25 45 65 85 105 ID = 3.75 A VGS = 10 V IDSS, LEAKAGE (A) 1E-03 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 8E-04 6E-04 TJ = 100C 4E-04 2E-04 0 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NID6002N TYPICAL PERFORMANCE CURVES 8 IS, SOURCE CURRENT (AMPS) 7 6 IGSS (mA) 5 4 3 2 1 0 0.0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 2000 0 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8000 6000 4000 VGS = 0 V TJ = 25C 12000 10000 VDS = 0 V TJ = 160C Figure 7. Diode Forward Voltage vs. Current Figure 8. Input Current vs. Gate Voltage 12 DRAIN CURRENT (AMPS) 10 8 6 4 2 0 0E+0 Current Limit Temperature Limit VGS = 10 V VGS = 5 V 1E-3 2E-3 3E-3 4E-3 5E-3 6E-3 7E-3 TIME (seconds) Figure 9. Short Circuit Response* *(Actual thermal cycling response in short circuit dependent on device power level, thermal mounting, and ambient temperature conditions) http://onsemi.com 5 NID6002N PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NID6002N/D |
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